Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yao, Jing-Neng | en_US |
dc.contributor.author | Lin, Yueh-Chin | en_US |
dc.contributor.author | Wong, Ying-Chieh | en_US |
dc.contributor.author | Huang, Ting-Jui | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-08-02T02:18:27Z | - |
dc.date.available | 2019-08-02T02:18:27Z | - |
dc.date.issued | 2019-06-07 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/2.0141906jss | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152284 | - |
dc.description.abstract | Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.0141906jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000470810500001 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |