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dc.contributor.authorOu, P-Cen_US
dc.contributor.authorLin, J-Hen_US
dc.contributor.authorHsieh, W-Fen_US
dc.date.accessioned2014-12-08T15:21:24Z-
dc.date.available2014-12-08T15:21:24Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-011-4706-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15228-
dc.description.abstractWe demonstrated the spectral dependence of time-resolved reflectance in a ZnO epitaxial film at room temperature. The ultrafast thermalization time increases as increasing the excitation photon energy accompanied with the hot phonon effect. The obtained recovery time of renormalized bandgap, associated with the nonradiative decay or the free exciton formation, is independent of photon energy. Based on a theoretical model to calculate the carrier-induced change of refractive index in ZnO, the spectral dependent transient reflectance can be successfully analyzed as a result of combined effects of band-filling (BF) and bandgap renormalization (BGR). The measured transient reflectance decreases with decreasing the photon energy for excitation above the bandgap states revealing the significance of competition of the BF and BGR effects.en_US
dc.language.isoen_USen_US
dc.titleSpectral dependence of transient reflectance in a ZnO epitaxial film at room temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00340-011-4706-xen_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume106en_US
dc.citation.issue2en_US
dc.citation.spage399en_US
dc.citation.epage404en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000299749700022-
dc.citation.woscount3-
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