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dc.contributor.authorSingh, Preetpalen_US
dc.contributor.authorTan, Cher Mingen_US
dc.contributor.authorZhao, Wenyuen_US
dc.contributor.authorKuo, Hao Chungen_US
dc.date.accessioned2019-08-02T02:18:28Z-
dc.date.available2019-08-02T02:18:28Z-
dc.date.issued2019-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2019.2904740en_US
dc.identifier.urihttp://hdl.handle.net/11536/152302-
dc.description.abstractLumen flux of white light-emitting diodes (LEDs) can be increased by increasing phosphor layer thickness and blue LED's drive current. Higher LED currents will lead to an increase in blue light in the output lumen along with higher temperatures which is not acceptable, and a corresponding decrease in the yellow light emission. The physical reason for this decrease is attributed to the finite phosphor particles in the layer and re-emission occurring due to scattered or back reflected blue light rays. A parameter called blue to yellow ratio (BYR) is used which can lead to a current with maximum phosphor utilization while preventing the LED output color to shift from white toward blue. As the degree of impact on reliability from drive current and thickness is different, a careful adjustment of the drive current and phosphor layer thickness shall be made for a given lumen. Response surface method is employed to obtain an optimal combination of the current and thickness where the temperature is the minimum for a given lumen level. The temperature difference for different combinations of current and thickness for a given lumen can be as high as 15 degrees C as found in this paper.en_US
dc.language.isoen_USen_US
dc.subjectDrive currenten_US
dc.subjectoptimizationen_US
dc.subjectphosphor temperatureen_US
dc.subjectresponse surface method and blue to yellow ratioen_US
dc.titleInvestigation of the Impact of Drive Current and Phosphor Thickness on the Reliability of High Power White LED Lampen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2019.2904740en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume19en_US
dc.citation.issue2en_US
dc.citation.spage290en_US
dc.citation.epage297en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000471007800008en_US
dc.citation.woscount0en_US
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