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dc.contributor.authorLi, Mengjiaoen_US
dc.contributor.authorYang, Feng-Shouen_US
dc.contributor.authorHsiao, Yung-Chien_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorWu, Hsing-Meien_US
dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorLi, Hao-Rueien_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorHo, Ching-Hwaen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorLi, Wenwuen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorLai, Ying-Chihen_US
dc.date.accessioned2019-08-02T02:18:30Z-
dc.date.available2019-08-02T02:18:30Z-
dc.date.issued2019-05-09en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201809119en_US
dc.identifier.urihttp://hdl.handle.net/11536/152321-
dc.description.abstractElectronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In InSe T-FET) obtained through the vertical combination of an In-doped InSe transistor and triboelectric nanogenerator is demonstrated. The w/In InSe T-FET can be operated by adjusting the distance between two triboelectrification layers, which generates a negative electrostatic potential that serves as a gate voltage to tune the charge carrier transport behavior of the InSe channel. Benefiting from the surface charging doping of the In layer, the w/In InSe T-FET exhibits high reliability and sensitivity with a large on/off current modulation of 10(6) under a low drain-source voltage of 0.1 V and external frictional force. To demonstrate its function as a power-saving tactile sensor, the w/In InSe T-FET is used to sense INSE in Morse code and power on a light-emitting diode. This work reveals the promise of 2D material-based tribotronics for use in nanosensors with low power consumption as well as in intelligent systems.en_US
dc.language.isoen_USen_US
dc.subject2D electronicsen_US
dc.subjectInSe transistorsen_US
dc.subjecttactile sensorsen_US
dc.subjecttriboelectric nanogeneratorsen_US
dc.subjecttribotronicsen_US
dc.titleLow-Voltage Operational, Low-Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201809119en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume29en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000471333600015en_US
dc.citation.woscount1en_US
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