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dc.contributor.authorHsieh, Chi-Tien_US
dc.contributor.authorChang, Shu-Weien_US
dc.date.accessioned2019-08-02T02:18:30Z-
dc.date.available2019-08-02T02:18:30Z-
dc.date.issued2019-11-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2019.2918946en_US
dc.identifier.urihttp://hdl.handle.net/11536/152325-
dc.description.abstractThe p-type doping in base regions of transistor lasers (TLs) plays an essential role in both the electrical and optical functionalities. The holes in heavily p-doped bases lay the ground for not only the control of current signals but also stimulated emission of lasing modes. In this paper, however, we show that an exceedingly high doping level does not further enhance the radiative recombination in TLs. With heavy doping, the distorted band profile induced by the slight charge separation of holes and ionized acceptors results in no bound valence subbands in the quantum well (QW). This effect stops holes from entering the QW, and most radiative transitions take place inefficiently between bound electrons in the QW and quasi-free holes in the base. As a result, the radiative lifetime is only shortened to the (sub-) nanosecond range, suggesting that the previously reported picosecond carrier lifetime of TLs might originate from other recombination processes.en_US
dc.language.isoen_USen_US
dc.subjectTransistor laseren_US
dc.subjectp-dopingen_US
dc.subjectradiative lifetimeen_US
dc.titleEffect of Heavily P-Doped Base on Radiative Recombination of Transistor Laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2019.2918946en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000471684200001en_US
dc.citation.woscount0en_US
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