完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Nagarajan, Venkatesan | en_US |
dc.contributor.author | Chen, Kun-Ming | en_US |
dc.contributor.author | Wang, Huan-Chung | en_US |
dc.contributor.author | Singh, Sankalp Kumar | en_US |
dc.contributor.author | Anandan, Deepak | en_US |
dc.contributor.author | Lin, Yueh-Chin | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-08-02T02:18:33Z | - |
dc.date.available | 2019-08-02T02:18:33Z | - |
dc.date.issued | 2019-05-01 | en_US |
dc.identifier.issn | 0026-2692 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.mejo.2019.03.016 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152357 | - |
dc.description.abstract | A simple technique for extracting the bias-dependent parasitic series resistances of the GaN-based high electron mobility transistor (HEMT) is demonstrated in this paper. With considering the non-quasi-static effect in devices, new analytical Z-parameter formulations are derived to determine parasitic resistances using the curve-fitting algorithm. More accuracy parasitic resistances can be obtained over a wide fitting frequency range compared to the conventional method which ignores the non-quasi-static effect. Here the intrinsic parameters are then calculated directly from intrinsic Y-parameters after de-embedding the parasitic elements in the small-signal equivalent circuit. An excellent agreement between the measured and simulated S-parameters from 100 MHz to 40 GHz is achieved, which validates the feasibility of our method for extracting the bias-dependent parasitic resistances. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Extraction method | en_US |
dc.subject | GaN | en_US |
dc.subject | High electron mobility transistor (HEMT) | en_US |
dc.subject | Non-quasi-static effects | en_US |
dc.subject | Parasitic series resistance | en_US |
dc.title | A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.mejo.2019.03.016 | en_US |
dc.identifier.journal | MICROELECTRONICS JOURNAL | en_US |
dc.citation.volume | 87 | en_US |
dc.citation.spage | 51 | en_US |
dc.citation.epage | 54 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000468600200006 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |