標題: Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers
作者: Naseem
Ahmad, Zohauddin
Chao, Rui-Lin
Chang, Hsiang-Szu
Ni, C-J
Chen, H-S
Huang, Jack Jia-Sheng
Chou, Emin
Jan, Yu-Heng
Shi, Jin-Wei
光電工程學系
Department of Photonics
公開日期: 27-五月-2019
摘要: We demonstrate a top-illuminated high-speed uni-traveling carrier photodiode (UTC-PD) with a novel design in the p-type absorber, which call effectively shorten the photon absorption depth at telecommunication wavelengths (1.31 similar to 1.55 mu m) and further enhance the bandwidth-efficiency product of UTC-PD. In our proposed new UTC-PD structure, the p-type In0.53Ga0.47As absorption layer is replaced by the type-II GaAs0.5Sb0.5 (p)/In0.53Ga0.47As (i) hybrid absorber. Due to the narrowing of the bandgap and enhancement of the photo-absorption process at the type-II interface between the GaAs0.5Sb0.5 and In0.53Ga0.47As layers, our device shows an over 16.7% improvement in the responsivity compared with that of UTC-PD with the same thickness of pure In0.53Ga0.47As absorber (0.7 mu m) and a zero optical coupling loss. Our demonstrated device with a simple top-illuminated structure offers a large active mesa (25 mu m). a wide optical-to-electrical (O-E) bandwidth (33 GHz), a high responsivity (0.7 A/W), and a high saturation current (>5 mA) under 1.31 mu m optical wavelength. These promising results suggest that our proposed PD structure can fundamentally overcome the trade-off among bandwidth. efficiency. and device active diameter of high-speed PDs. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OE.27.015495
http://hdl.handle.net/11536/152376
ISSN: 1094-4087
DOI: 10.1364/OE.27.015495
期刊: OPTICS EXPRESS
Volume: 27
Issue: 11
起始頁: 15495
結束頁: 15504
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