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dc.contributor.authorNaseemen_US
dc.contributor.authorAhmad, Zohauddinen_US
dc.contributor.authorChao, Rui-Linen_US
dc.contributor.authorChang, Hsiang-Szuen_US
dc.contributor.authorNi, C-Jen_US
dc.contributor.authorChen, H-Sen_US
dc.contributor.authorHuang, Jack Jia-Shengen_US
dc.contributor.authorChou, Eminen_US
dc.contributor.authorJan, Yu-Hengen_US
dc.contributor.authorShi, Jin-Weien_US
dc.date.accessioned2019-08-02T02:18:34Z-
dc.date.available2019-08-02T02:18:34Z-
dc.date.issued2019-05-27en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.27.015495en_US
dc.identifier.urihttp://hdl.handle.net/11536/152376-
dc.description.abstractWe demonstrate a top-illuminated high-speed uni-traveling carrier photodiode (UTC-PD) with a novel design in the p-type absorber, which call effectively shorten the photon absorption depth at telecommunication wavelengths (1.31 similar to 1.55 mu m) and further enhance the bandwidth-efficiency product of UTC-PD. In our proposed new UTC-PD structure, the p-type In0.53Ga0.47As absorption layer is replaced by the type-II GaAs0.5Sb0.5 (p)/In0.53Ga0.47As (i) hybrid absorber. Due to the narrowing of the bandgap and enhancement of the photo-absorption process at the type-II interface between the GaAs0.5Sb0.5 and In0.53Ga0.47As layers, our device shows an over 16.7% improvement in the responsivity compared with that of UTC-PD with the same thickness of pure In0.53Ga0.47As absorber (0.7 mu m) and a zero optical coupling loss. Our demonstrated device with a simple top-illuminated structure offers a large active mesa (25 mu m). a wide optical-to-electrical (O-E) bandwidth (33 GHz), a high responsivity (0.7 A/W), and a high saturation current (>5 mA) under 1.31 mu m optical wavelength. These promising results suggest that our proposed PD structure can fundamentally overcome the trade-off among bandwidth. efficiency. and device active diameter of high-speed PDs. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleEnhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbersen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.27.015495en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume27en_US
dc.citation.issue11en_US
dc.citation.spage15495en_US
dc.citation.epage15504en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000469227200034en_US
dc.citation.woscount0en_US
Appears in Collections:Articles