完整後設資料紀錄
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dc.contributor.authorRaevski, I. P.en_US
dc.contributor.authorTitov, V. V.en_US
dc.contributor.authorChen, Haydnen_US
dc.contributor.authorZakharchenko, I. N.en_US
dc.contributor.authorRaevskaya, S. I.en_US
dc.contributor.authorShevtsova, S. I.en_US
dc.date.accessioned2019-08-02T02:18:35Z-
dc.date.available2019-08-02T02:18:35Z-
dc.date.issued2019-08-01en_US
dc.identifier.issn0022-2461en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10853-019-03669-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/152385-
dc.description.abstractTemperature dependences of the dielectric permittivity epsilon of (1-x)PbFe0.5Nb0.5O3-x BaFe0.5Nb0.5O3 solid solution ceramics at 100Hz-1MHz have been studied in the 12-500K temperature range. To lower the conductivity values and exclude the corresponding relaxations, 1wt% of Li2CO3 was added to the starting mixture of oxides. It was found that Li-doping is effective in lowering the conductivity only for compositions with x0.5. T he permittivity-temperature dependences of the (1-x)PbFe0.5Nb0.5O3-xBaFe(0.5)Nb(0.5)O(3) compositions were found to change, as x grows, from relatively sharp frequency-independent maxima typical of usual ferroelectrics to the diffused and frequency-dependent maxima typical of relaxors and then to the saturated at low temperatures and frequency-independent epsilon(T) curves typical of incipient ferroelectrics and at last, to the step-like frequency-dependent epsilon(T) curves known for the dielectrics with Maxwell-Wagner-type polarization. The epsilon value of BaFe0.5Nb0.5O3 at 20K measured at 1MHz does not exceed 30. The character of the evolution of dielectric properties in the (1-x)PbFe0.5Nb0.5O3-x BaFe0.5Nb0.5O3 system and low epsilon value of BaFe0.5Nb0.5O3 implies that BaFe0.5Nb0.5O3 is a paraelectric rather than ferroelectric relaxor.en_US
dc.language.isoen_USen_US
dc.titleEvolution of dielectric properties in the (1-x) PbFe0.5Nb0.5O3-xBaFe(0.5)Nb(0.5)O(3) solid solution systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10853-019-03669-4en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCEen_US
dc.citation.volume54en_US
dc.citation.issue16en_US
dc.citation.spage10984en_US
dc.citation.epage10997en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000469467500002en_US
dc.citation.woscount0en_US
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