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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChen, Chieh-Yangen_US
dc.contributor.authorChuang, Min-Huien_US
dc.contributor.authorChao, Pei-Jungen_US
dc.date.accessioned2019-08-02T02:18:36Z-
dc.date.available2019-08-02T02:18:36Z-
dc.date.issued2019-05-01en_US
dc.identifier.issn1996-1944en_US
dc.identifier.urihttp://dx.doi.org/10.3390/ma12091492en_US
dc.identifier.urihttp://hdl.handle.net/11536/152394-
dc.description.abstractIn this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal-oxide-semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device's nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device-circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation.en_US
dc.language.isoen_USen_US
dc.subjectDC and AC characteristic fluctuationsen_US
dc.subjectgate-all-arounden_US
dc.subjectnanowireen_US
dc.subjectMOSFETsen_US
dc.subjectwork function fluctuationen_US
dc.subjectaspect ratio of channel cross-sectionen_US
dc.subjecttiming fluctuationen_US
dc.subjectnoise margin fluctuationen_US
dc.subjectpower fluctuationen_US
dc.subjectCMOS circuiten_US
dc.subjectstatistical device simulationen_US
dc.titleCharacteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/ma12091492en_US
dc.identifier.journalMATERIALSen_US
dc.citation.volume12en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000469757500133en_US
dc.citation.woscount0en_US
Appears in Collections:Articles