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dc.contributor.authorShih, Cheng Weien_US
dc.contributor.authorYen, Te Juien_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorLu, Chun Fuen_US
dc.contributor.authorSu, Wei Fangen_US
dc.date.accessioned2019-08-02T02:18:36Z-
dc.date.available2019-08-02T02:18:36Z-
dc.date.issued2019-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2019.2912032en_US
dc.identifier.urihttp://hdl.handle.net/11536/152399-
dc.description.abstractUsing a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm(2)/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/OFF-current values of 3 x 10(6) and 7 x 10(5) was achieved for the SnO2 TFT at low processing temperatures of 180 degrees C and 100 degrees C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.en_US
dc.language.isoen_USen_US
dc.subjectTin oxideen_US
dc.subjectSnO2en_US
dc.subjecttransistoren_US
dc.subjectUV irradiationen_US
dc.titleLow-Temperature Processed Tin Oxide Transistor With Ultraviolet Irradiationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2019.2912032en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue6en_US
dc.citation.spage909en_US
dc.citation.epage912en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000469848300017en_US
dc.citation.woscount0en_US
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