Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Gray | en_US |
dc.contributor.author | Tang, Hao-Ling | en_US |
dc.contributor.author | Cheng, Hsu-Chieh | en_US |
dc.contributor.author | Chen, Hung-Lin | en_US |
dc.date.accessioned | 2014-12-08T15:21:25Z | - |
dc.date.available | 2014-12-08T15:21:25Z | - |
dc.date.issued | 2012-02-01 | en_US |
dc.identifier.issn | 0733-8724 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JLT.2011.2179974 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15239 | - |
dc.description.abstract | The dynamic properties of uniformly and chirpily stacked InAs-InGaAs-GaAs quantum dot lasers are analyzed in terms of relative intensity noise spectra. For uniformly stacked quantum dot laser with ground-state lasing emissions of 1.3 mu m, the K-factor limited bandwidth is 13 GHz. The extracted differential gain and gain compression factor are 1.7 x 10(-15) cm(2) and 2 x 10(-16) cm(3), respectively. For chirpily stacked quantum dot laser with excited-state lasing emissions of 1.2 mu m, the K-factor limited bandwidth is 14 GHz. Yet the nonproportional dependence between resonance frequency and square root of incremental current yields differential gain of 4.3 x 10(-15) cm(2) and huge gain compression factor of 1.4 x 10(-14) cm(3). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Differential gain | en_US |
dc.subject | gain compression | en_US |
dc.subject | relative intensity noise (RIN) | en_US |
dc.subject | quantum dot lasers | en_US |
dc.title | Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs-InGaAs-GaAs Quantum Dot Lasers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JLT.2011.2179974 | en_US |
dc.identifier.journal | JOURNAL OF LIGHTWAVE TECHNOLOGY | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 331 | en_US |
dc.citation.epage | 336 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000299795900002 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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