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dc.contributor.authorLin, Grayen_US
dc.contributor.authorTang, Hao-Lingen_US
dc.contributor.authorCheng, Hsu-Chiehen_US
dc.contributor.authorChen, Hung-Linen_US
dc.date.accessioned2014-12-08T15:21:25Z-
dc.date.available2014-12-08T15:21:25Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2011.2179974en_US
dc.identifier.urihttp://hdl.handle.net/11536/15239-
dc.description.abstractThe dynamic properties of uniformly and chirpily stacked InAs-InGaAs-GaAs quantum dot lasers are analyzed in terms of relative intensity noise spectra. For uniformly stacked quantum dot laser with ground-state lasing emissions of 1.3 mu m, the K-factor limited bandwidth is 13 GHz. The extracted differential gain and gain compression factor are 1.7 x 10(-15) cm(2) and 2 x 10(-16) cm(3), respectively. For chirpily stacked quantum dot laser with excited-state lasing emissions of 1.2 mu m, the K-factor limited bandwidth is 14 GHz. Yet the nonproportional dependence between resonance frequency and square root of incremental current yields differential gain of 4.3 x 10(-15) cm(2) and huge gain compression factor of 1.4 x 10(-14) cm(3).en_US
dc.language.isoen_USen_US
dc.subjectDifferential gainen_US
dc.subjectgain compressionen_US
dc.subjectrelative intensity noise (RIN)en_US
dc.subjectquantum dot lasersen_US
dc.titleAnalysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs-InGaAs-GaAs Quantum Dot Lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2011.2179974en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume30en_US
dc.citation.issue3en_US
dc.citation.spage331en_US
dc.citation.epage336en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000299795900002-
dc.citation.woscount1-
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