Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yao, Jing Neng | en_US |
dc.contributor.author | Lin, Yueh Chin | en_US |
dc.contributor.author | Lin, Min Song | en_US |
dc.contributor.author | Huang, Ting Jui | en_US |
dc.contributor.author | Hsu, Heng Tung | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.contributor.author | Chang, Edward Y. | en_US |
dc.date.accessioned | 2019-08-02T02:18:36Z | - |
dc.date.available | 2019-08-02T02:18:36Z | - |
dc.date.issued | 2019-07-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2019.03.060 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152401 | - |
dc.description.abstract | In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, I-ON/I-OFF ratio of 2.4x10(4), an off-state gate leakage current of less than 5x10(-6) A/mm and a G(m,max) of 1100 mS/mm at V-DS = 0.5 V. When increasing the drain-source bias (V-DS) to 1.0 V, the G(m,max) increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InAs | en_US |
dc.subject | Field plate | en_US |
dc.subject | Low power | en_US |
dc.subject | HEMT | en_US |
dc.title | Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.sse.2019.03.060 | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 157 | en_US |
dc.citation.spage | 55 | en_US |
dc.citation.epage | 60 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000469851100008 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |