標題: Investigation of P-type Hydrogenated Nanocrystalline Silicon Grown by VHF-PECVD as Emitter in Silicon Heterojunction Solar Cells
作者: Chen, Pei-Ling
Chen, Po-Wei
Matsui, Takuya
Sai, Hitoshi
Tsai, Chuang-Chuang
Matsubara, Koji
光電工程學系
Department of Photonics
關鍵字: P-type hydrogenated nanocrystalline silicon;very-high-frequency PECVD;carrier lifetime;Suns-VOC;silicon heterojunction solar cells
公開日期: 1-一月-2018
摘要: P-type hydrogenated nanocrystalline silicon (ncSi: H(p)) films as emitter layers in silicon heterojunction solar (SHJ) cells by VHF-PECVD (65 and 100 MHz) and standard RF-PECVD (13.56 MHz) were investigated. We demonstrate that the use of VHF-PECVD is advantageous in fast nucleation in a very thin layer (< 15 nm), which in turn results in improved TCO/p contact. In addition, the deposition of nc-Si: H (p) layer by VHF-PECVD can improve the surface passivation properties as evidenced by QSSPC lifetime measurement for the solar cell precursor (i. e., pi/ c-Si/ in). These results suggest that VHF plasma generates more atomic hydrogen flux, which brings beneficial aspects both in terms of nc-Si: H growth and post-hydrogenation. Compared to our standard a-Si: H(p) emitter, the use of nc-Si: H(p) prepared by 65 MHz PECVD improved the efficiency from 19.59% to 20.50%.
URI: http://hdl.handle.net/11536/152451
ISBN: 978-1-5386-8529-7
ISSN: 2159-2330
期刊: 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
起始頁: 1979
結束頁: 1981
顯示於類別:會議論文