標題: | Investigation of P-type Hydrogenated Nanocrystalline Silicon Grown by VHF-PECVD as Emitter in Silicon Heterojunction Solar Cells |
作者: | Chen, Pei-Ling Chen, Po-Wei Matsui, Takuya Sai, Hitoshi Tsai, Chuang-Chuang Matsubara, Koji 光電工程學系 Department of Photonics |
關鍵字: | P-type hydrogenated nanocrystalline silicon;very-high-frequency PECVD;carrier lifetime;Suns-VOC;silicon heterojunction solar cells |
公開日期: | 1-一月-2018 |
摘要: | P-type hydrogenated nanocrystalline silicon (ncSi: H(p)) films as emitter layers in silicon heterojunction solar (SHJ) cells by VHF-PECVD (65 and 100 MHz) and standard RF-PECVD (13.56 MHz) were investigated. We demonstrate that the use of VHF-PECVD is advantageous in fast nucleation in a very thin layer (< 15 nm), which in turn results in improved TCO/p contact. In addition, the deposition of nc-Si: H (p) layer by VHF-PECVD can improve the surface passivation properties as evidenced by QSSPC lifetime measurement for the solar cell precursor (i. e., pi/ c-Si/ in). These results suggest that VHF plasma generates more atomic hydrogen flux, which brings beneficial aspects both in terms of nc-Si: H growth and post-hydrogenation. Compared to our standard a-Si: H(p) emitter, the use of nc-Si: H(p) prepared by 65 MHz PECVD improved the efficiency from 19.59% to 20.50%. |
URI: | http://hdl.handle.net/11536/152451 |
ISBN: | 978-1-5386-8529-7 |
ISSN: | 2159-2330 |
期刊: | 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) |
起始頁: | 1979 |
結束頁: | 1981 |
顯示於類別: | 會議論文 |