完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Xu, S. C. | en_US |
dc.contributor.author | Chen, Hui-Lung | en_US |
dc.contributor.author | Lin, M. C. | en_US |
dc.date.accessioned | 2014-12-08T15:21:28Z | - |
dc.date.available | 2014-12-08T15:21:28Z | - |
dc.date.issued | 2012-01-19 | en_US |
dc.identifier.issn | 1932-7447 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/jp206934r | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15251 | - |
dc.description.abstract | We present reaction pathways for adsorption reactions of the O atom and O-2 molecule in the pristine and monovacancy defective graphite (0001) based on quantum chemical potential energy surfaces (PESs) obtained by the dispersion-augmented density-functional tight-binding (DFTB-D) method. We use a dicircumcoronene C96H24 (L0D) graphene slab as the pristine graphite (0001) model and dicircumcoronene C95H24 (LIV) as the graphite (0001) monovacancy defect model. We found that the adsorption reactions of O and O-2 on the L0D surface can produce defects on the graphite surface. O can yield CO, while O-2 can yield both CO and CO2 molecules. The adsorption reactions of the O and O-2 on the LW surface can produce a 2-C defective graphite surface and CO, and CO and CO2, respectively. The O and O-2 more readily oxidize the defected surface, LIV, than the defect-free surface, L0D. On the basis of the computed reaction pathways, we predict reaction rate constants in the temperature range between 300 and 3000 K using Rice-Ramsperger-Kassel-Marcus (RRKM) theory. High-temperature quantum chemical molecular dynamics simulations at 3000 K based on on-the-fly DFTB-D energies and gradients support the results of our PES studies. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Quantum Chemical Prediction of Reaction Pathways and Rate Constants for the Reactions of O-x (x=1 and 2) with Pristine and Defective Graphite (0001) Surfaces | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/jp206934r | en_US |
dc.identifier.journal | JOURNAL OF PHYSICAL CHEMISTRY C | en_US |
dc.citation.volume | 116 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 1841 | en_US |
dc.citation.epage | 1849 | en_US |
dc.contributor.department | 應用化學系分子科學碩博班 | zh_TW |
dc.contributor.department | Institute of Molecular science | en_US |
dc.identifier.wosnumber | WOS:000299584800026 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |