完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Chen, Chia-Min | en_US |
dc.contributor.author | Liu, Chih-Ming | en_US |
dc.contributor.author | Wei, Kung-Hwa | en_US |
dc.contributor.author | Jeng, U-Ser | en_US |
dc.contributor.author | Su, Chiu-Hun | en_US |
dc.date.accessioned | 2014-12-08T15:21:28Z | - |
dc.date.available | 2014-12-08T15:21:28Z | - |
dc.date.issued | 2012-01-14 | en_US |
dc.identifier.issn | 0959-9428 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1039/c1jm13936c | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15256 | - |
dc.description.abstract | In this study, we fabricated p-channel-type non-volatile organic field-effect transistor (OFET) memory devices featuring an asymmetric PS-b-P4VP diblock copolymer layer incorporating high- and low-work-function metal nanoparticles (NPs) in the hydrophilic and hydrophobic blocks, respectively. We chose the highly asymmetric diblock copolymer PS(56k)-b-P4VP(8k) as the polymer electret to create the memory windows, and used the different work functions of the ex situ-synthesized metal NPs to tune the memory window for either p- or n-channel applications. The transfer curves of non-volatile OFET memory devices incorporating an asymmetric PS(56k)-b-P4VP8k layer embedded with high-work-function Pt NPs (5.65 eV) in the P4VP block exhibited a positive threshold voltage shift and a large memory window (ca. 27 V). In contrast, the transfer curves of the corresponding non-volatile OFET memory devices featuring embedded low-work-function (4.26 eV) Ag NPs exhibited a negative threshold voltage shift and a smaller memory window (ca. 19 V). This approach provides a versatile way to fabricate p- or possibly n-channel-type non-volatile organic field-effect transistor (OFET) memory devices with the same processing procedure. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Non-volatile organic field-effect transistor memory comprising sequestered metal nanoparticles in a diblock copolymer film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c1jm13936c | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS CHEMISTRY | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 454 | en_US |
dc.citation.epage | 461 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000299020000026 | - |
dc.citation.woscount | 17 | - |
顯示於類別: | 期刊論文 |