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dc.contributor.authorMarkou, Anastasiosen_US
dc.contributor.authorKriegner, Dominiken_US
dc.contributor.authorGayles, Jacoben_US
dc.contributor.authorZhang, Liguoen_US
dc.contributor.authorChen, Yi-Chengen_US
dc.contributor.authorErnst, Benedikten_US
dc.contributor.authorLai, Yu-Hongen_US
dc.contributor.authorSchnelle, Walteren_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorSun, Yanen_US
dc.contributor.authorFelser, Claudiaen_US
dc.date.accessioned2019-09-02T07:46:15Z-
dc.date.available2019-09-02T07:46:15Z-
dc.date.issued2019-08-19en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.100.054422en_US
dc.identifier.urihttp://hdl.handle.net/11536/152642-
dc.description.abstractTopological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co2MnGa films from thin (20 nm) to bulklike behavior (80 nm) in order to understand the underlying mechanisms and the role of topology. The magnetron sputtered Co2MnGa films are L2(1)-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13%, which is comparatively larger than topologically trivial metals. There is good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggests that the effect is intrinsic. Thus, the Co2MnGa compound manifests as a promising material for topologically driven spintronic applications.en_US
dc.language.isoen_USen_US
dc.titleThickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co2MnGaen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.100.054422en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume100en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000481609200002en_US
dc.citation.woscount0en_US
Appears in Collections:Articles