完整後設資料紀錄
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dc.contributor.authorSeregin, D. S.en_US
dc.contributor.authorNaumov, S.en_US
dc.contributor.authorChang, W-Yen_US
dc.contributor.authorWu, Y-Hen_US
dc.contributor.authorWang, Y.en_US
dc.contributor.authorKotova, N. M.en_US
dc.contributor.authorVishnevskiy, A. S.en_US
dc.contributor.authorWei, S.en_US
dc.contributor.authorZhang, J.en_US
dc.contributor.authorVorotilov, K. A.en_US
dc.contributor.authorRedzheb, M.en_US
dc.contributor.authorLeu, J.en_US
dc.contributor.authorBaklanov, M. R.en_US
dc.date.accessioned2019-09-02T07:46:16Z-
dc.date.available2019-09-02T07:46:16Z-
dc.date.issued2019-09-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2019.06.050en_US
dc.identifier.urihttp://hdl.handle.net/11536/152656-
dc.description.abstractCarbon-bridged organosilicate films deposited by using different precursors are studied by both experimentally and theoretically. It is shown that carbon-bridged OSG films have higher Young Modulus (E) than methyl-terminated films and E(phenylene) > E(ethylene) > E(methylene). However, the k-values of these films show the same tendency and this is one of the drawbacks of carbon terminated materials when they are considered as low-k candidates. It is shown that the films having a phenylene bridge can be destructed by UV light with wavelength > 200 nm while ethylene or an ethylene bridged samples are stable. Mechanism of UV initiated destruction of phenylene bridged materials is analyzed by using quantum chemical calculations. The presented results allow to conclude that the presence of long aliphatic and aromatic bridges makes OSG materials more sensitive to UV lighten_US
dc.language.isoen_USen_US
dc.subjectOrganosilicate glassesen_US
dc.subjectLow dielectric constanten_US
dc.subjectCarbon bridgeen_US
dc.subjectInterconnect technologyen_US
dc.subjectUV absorptionen_US
dc.titleEffect of the C-bridge on UV properties of organosilicate filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2019.06.050en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume685en_US
dc.citation.spage329en_US
dc.citation.epage334en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000476884100044en_US
dc.citation.woscount0en_US
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