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dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorChen, Jian-Youen_US
dc.contributor.authorHan, Ping-Chengen_US
dc.contributor.authorLee, Ming-Wenen_US
dc.contributor.authorYang, Kun-Shengen_US
dc.contributor.authorWang, Huan-Chungen_US
dc.contributor.authorChang, Po-Chunen_US
dc.contributor.authorLuc, Quang Hoen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorDee, Chang-Fuen_US
dc.contributor.authorHamzah, Azrul Azlanen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-09-02T07:46:17Z-
dc.date.available2019-09-02T07:46:17Z-
dc.date.issued2019-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2019.2922301en_US
dc.identifier.urihttp://hdl.handle.net/11536/152675-
dc.description.abstractA GaN metal-insulator-semiconductor high electronmobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage (V-th) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance (R-ON) and high positive V-th. The designed tri-gate device exhibits a high V-th of +2.61 V at current density (I-DS) = 1 mu A/mm, a high maximum current density (I-DS, MAX) of 896 mA/mm, a low R-ON of 5.0 Omega center dot mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance (R-ON,R- SP) among reported normallyoff GaN device results with BV > 650 V.en_US
dc.language.isoen_USen_US
dc.subjectAlGaN/GaNen_US
dc.subjectcharge trap gate stacken_US
dc.subjectenhancement modeen_US
dc.subjectferroelectric materialsen_US
dc.subjectMIS-HEMTen_US
dc.subjectnormally-offen_US
dc.subjecttri-gateen_US
dc.titleNormally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2019.2922301en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume66en_US
dc.citation.issue8en_US
dc.citation.spage3441en_US
dc.citation.epage3446en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000477697400030en_US
dc.citation.woscount0en_US
Appears in Collections:Articles