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dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorLin, Hsiang-Tingen_US
dc.contributor.authorLai, Ming-Shengen_US
dc.contributor.authorYu, Cheng-Lien_US
dc.contributor.authorWu, Chong-Rongen_US
dc.contributor.authorChou, He-Chunen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChen, Chien_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.date.accessioned2019-09-02T07:46:18Z-
dc.date.available2019-09-02T07:46:18Z-
dc.date.issued2019-07-24en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.9b05082en_US
dc.identifier.urihttp://hdl.handle.net/11536/152687-
dc.description.abstractAtomically thin membranes of two-dimensional (2-D) transition-metal dichalcogenides (TMDCs) have distinct emission properties, which can be utilized for realizing ultrathin optoelectronic integrated systems in the future. Growing a large-area and strain-reduced monolayer 2-D material on a three-dimensional (3-D) substrate with microstructures or nanostructures is a crucial technique because the electronic band structure of TMDC atomic layers is strongly affected by the number of stacked layers and strain. In this study, a large-area and strain-reduced MoS2 monolayer was fabricated on a 3D substrate through a two-step growth procedure. The material characteristics and optical properties of monolayer TMDCs fabricated on the nonplanar substrate were examined. The growth of monolayer MoS2 on a cone-shaped sapphire substrate effectively reduced the tensile strain induced by the substrate by decreasing the thermal expansion mismatch between the 2-D material and the substrate. Monolayer MoS2 grown on the nonplanar substrate exhibited uniform strain reduction and luminescence intensity. The fabrication of monolayer MoS2 on a nonplanar substrate increased the light extraction efficiency. In the future, large-area and strain-reduced 2-D TMDC materials grown on a nonplanar substrate can be employed as novel light-emitting devices for applications in lighting, communication, and displays for the development of ultrathin optoelectronic integrated systems.en_US
dc.language.isoen_USen_US
dc.subjecttwo-dimensional (2-D) materialen_US
dc.subjecttransition metal dichalcogenides (TMDCs)en_US
dc.subjectmolybdenum disulfide (MoS2)en_US
dc.subjectlight Emitteren_US
dc.subjectthree-dimensional (3-D) substrateen_US
dc.titleLarge-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitters on a Three-Dimensional Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.9b05082en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume11en_US
dc.citation.issue29en_US
dc.citation.spage26243en_US
dc.citation.epage26249en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000477787200066en_US
dc.citation.woscount0en_US
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