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dc.contributor.authorChou, Wei-Chengen_US
dc.contributor.authorHu, Wen-Pinen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.authorChan, Hardy Wai-Hongen_US
dc.contributor.authorChen, Wen-Yihen_US
dc.date.accessioned2019-09-02T07:46:18Z-
dc.date.available2019-09-02T07:46:18Z-
dc.date.issued2019-07-30en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-47522-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/152692-
dc.description.abstractSilicon nanowire (SiNW) field-effect transistors (FETs) is a powerful tool in genetic molecule analysis because of their high sensitivity, short detection time, and label-free detection. In nucleic acid detection, GC-rich nucleic acid sequences form self-and cross-dimers and stem-loop structures, which can easily obtain data containing signals from nonspecific DNA binding. The features of GC-rich nucleic acid sequences cause inaccuracies in nucleic acid detection and hinder the development of precision medicine. To improve the inaccurate detection results, we used phosphate-methylated (neutral) nucleotides to synthesize the neutralized chimeric DNA oligomer probe. The probe fragment originated from a primer for the detection of hepatitis C virus (HCV) genotype 3b, and single-mismatched and perfect-matched targets were designed for single nucleotide polymorphisms (SNP) detection on the SiNW FET device. Experimental results revealed that the HCV-3b chimeric neutralized DNA (nDNA) probe exhibited better performance for SNP discrimination in 10 mM bis-tris propane buffer at 25 degrees C than a regular DNA probe. The SNP discrimination of the nDNA probe could be further improved at 40 degrees C on the FET device. Consequently, the neutralized chimeric DNA probe could successfully distinguish SNP in the detection of GC-rich target sequences under optimal operating conditions on the SiNW FET device.en_US
dc.language.isoen_USen_US
dc.titleNeutralized chimeric DNA probe for the improvement of GC-rich RNA detection specificity on the nanowire field-effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-47522-9en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.identifier.wosnumberWOS:000477858900032en_US
dc.citation.woscount0en_US
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