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dc.contributor.authorFujii, Takuyaen_US
dc.contributor.authorOhori, Daisukeen_US
dc.contributor.authorNoda, Shuichien_US
dc.contributor.authorTanimoto, Yosukeen_US
dc.contributor.authorSato, Daisukeen_US
dc.contributor.authorKurihara, Hideyukien_US
dc.contributor.authorMizubayashi, Wataruen_US
dc.contributor.authorEndo, Kazuhikoen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorOzaki, Takuyaen_US
dc.contributor.authorSamukawa, Seijien_US
dc.date.accessioned2019-10-05T00:08:38Z-
dc.date.available2019-10-05T00:08:38Z-
dc.date.issued2019-09-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.5100547en_US
dc.identifier.urihttp://hdl.handle.net/11536/152788-
dc.description.abstractThe authors developed extremely selective etching for making an atomically flat, defect-free germanium fin (Ge Fin) structure. The etching uses a hydrogen bromide (HBr) neutral beam (NB), and they investigated the etching reaction differences between the HBr NB and a Cl-2 NB. No sidewall etching by HBr NB occurred at 90 degrees C, although that by Cl-2 NB occurred at more than 90 degrees C. This was due to the different boiling points of GeBr4 and GeCl4 as the reacted layer was formed by NB irradiation on the Ge surface. As a result, the Ge sidewall etching by Cl-2 NB occurred above 90 degrees C, whereas that by HBr NB did not occur at 90 degrees C. Additionally, nonvolatile bromide protected layers, such as GeBr4 and SiBrxOy, were deposited on the Ge sidewall and the SiO2 top surface in case of using HBr, respectively. Then, the authors succeeded in fabricating the atomically flat, defect-free Ge Fin structure with the extremely selective HBr NB etching. This result shows that HBr NB can more precisely achieve sub-10-nm scale atomic layer Ge etching for 3D Fin-type MOSFETs.en_US
dc.language.isoen_USen_US
dc.titleAtomic layer defect-free etching for germanium using HBr neutral beamen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.5100547en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume37en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000486214700010en_US
dc.citation.woscount0en_US
Appears in Collections:Articles