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dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsu, H. C.en_US
dc.contributor.authorChen, L. C.en_US
dc.date.accessioned2014-12-08T15:21:30Z-
dc.date.available2014-12-08T15:21:30Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-3680-4en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11536/15280-
dc.identifier.urihttp://dx.doi.org/10.1109/LEOS.2009.5343083en_US
dc.description.abstractCrystal symmetry breaking of wurtzite C(6V) to orthorhombic C(2V) due to in-plane anisotropic strain was investigated for nonpolar a-ZnO epi-films grown on R-sapphire.en_US
dc.language.isoen_USen_US
dc.titleCrystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LEOS.2009.5343083en_US
dc.identifier.journal2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2en_US
dc.citation.spage349en_US
dc.citation.epage350en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000279577600181-
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