標題: Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
作者: Wang, Wei
Laudato, Mario
Ambrosi, Elia
Bricalli, Alessandro
Covi, Erika
Lin, Yu-Hsuan
Ielmini, Daniele
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Crosspoint array;diffusion model;selector device;surface self-diffusion;volatile switching
公開日期: 1-Sep-2019
摘要: Resistive-switching random access memory (RRAM) devices based on filamentary switching are attracting widespread interest for their unique properties, such as high ON-OFF ratio, ultrasteep slope, good endurance, and low-current operation. Recently, volatile RRAMs based on Ag drift and diffusion were also demonstrated for possible applications such as crosspoint array selectors and neuromorphic computing. However, the mechanism of the volatile switching, namely, the spontaneous dissolution of the Ag filament, is still not clear. A deep understanding of the metallic filament formation and spontaneous disruption would strongly help the engineering of the device for optimized performances. Here, we present a numerical physics-based drift/diffusion modeling framework to describe the threshold switching, I-V characteristics, and morphological evolution of the metallic filament. The model can support TCAD-type device simulations for scaling, reliability, and variability studies.
URI: http://dx.doi.org/10.1109/TED.2019.2928890
http://hdl.handle.net/11536/152822
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2928890
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 9
起始頁: 3795
結束頁: 3801
Appears in Collections:Articles