標題: | Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop Operation |
作者: | You, Wei-Xiang Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Ferroelectric;ferroelectric capacitor;ferroelectric FET (FeFET);depolarization field;retention;memory window (MW);nonvolatile memory (NVM) |
公開日期: | 1-九月-2019 |
摘要: | This letter investigates the depolarization field in a metal-ferroelectric-metal-insulator-metal (MFMIM) nonvolatile memory (NVM) considering the minor hysteresis loop operation. Our study indicates that, different from previous studies merely considering the major loop operation, the depolarization field for the ferroelectric undergoing the minor loop increases with decreasing oxide thickness. In other words, in addition to suppressing the gate leakage, thicker oxide thickness is favorable to lower the depolarization field and improves the retention for a given memory window (MW). This letter may provide insights for device design of ferroelectric nonvolatile memories. |
URI: | http://dx.doi.org/10.1109/LED.2019.2929277 http://hdl.handle.net/11536/152830 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2019.2929277 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 40 |
Issue: | 9 |
起始頁: | 1415 |
結束頁: | 1418 |
顯示於類別: | 期刊論文 |