標題: Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop Operation
作者: You, Wei-Xiang
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric;ferroelectric capacitor;ferroelectric FET (FeFET);depolarization field;retention;memory window (MW);nonvolatile memory (NVM)
公開日期: 1-九月-2019
摘要: This letter investigates the depolarization field in a metal-ferroelectric-metal-insulator-metal (MFMIM) nonvolatile memory (NVM) considering the minor hysteresis loop operation. Our study indicates that, different from previous studies merely considering the major loop operation, the depolarization field for the ferroelectric undergoing the minor loop increases with decreasing oxide thickness. In other words, in addition to suppressing the gate leakage, thicker oxide thickness is favorable to lower the depolarization field and improves the retention for a given memory window (MW). This letter may provide insights for device design of ferroelectric nonvolatile memories.
URI: http://dx.doi.org/10.1109/LED.2019.2929277
http://hdl.handle.net/11536/152830
ISSN: 0741-3106
DOI: 10.1109/LED.2019.2929277
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 40
Issue: 9
起始頁: 1415
結束頁: 1418
顯示於類別:期刊論文