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dc.contributor.authorJoi, Aniruddhaen_US
dc.contributor.authorVenkatraman, Kailashen_US
dc.contributor.authorTso, Kuang-Chihen_US
dc.contributor.authorDictus, Driesen_US
dc.contributor.authorDordi, Yezdien_US
dc.contributor.authorWu, Pu-Weien_US
dc.contributor.authorPao, Chih-Wenen_US
dc.contributor.authorAkolkar, Rohanen_US
dc.date.accessioned2019-10-05T00:08:44Z-
dc.date.available2019-10-05T00:08:44Z-
dc.date.issued2019-08-28en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0181909jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/152838-
dc.description.abstractA novel interface engineering approach, utilizing electrochemical atomic layer deposition (e-ALD) of Cu(Zn) on a Ru liner, is presented for enabling the metallization of sub-10 nm interconnects in future semiconductor devices. Upon thermal treatment, Zn present in the e-ALD Cu layer at similar to 0.8 at.% is shown to diffuse through the Ru liner and react with the SiO2 to form a Zn-silicate layer at the Ru-SiO2 interface. This 'self-forming' interfacial layer provides adhesion enhancement to the Ru-SiO2 interface and serves as a diffusion barrier retarding Cu diffusion into the SiO2 layer while enabling void-free gap-filling of high aspect ratio trench structures. Absorption Near-Edge Spectroscopy and Extended X-ray Absorption Fine Structure analyses confirm that the self-formed barrier layer is composed primarily of Zn2SiO4. The interface engineering approach utilizing Cu(Zn) presented herein offers several potential advantages over traditional Mn-based self-forming barrier approaches, i.e., scalability to narrower dimensions and minimal impact to interconnect resistance. (C) The Author(s) 2019. Published by ECS.en_US
dc.language.isoen_USen_US
dc.titleInterface Engineering Strategy Utilizing Electrochemical ALD of Cu-Zn for Enabling Metallization of Sub-10 nm Semiconductor Device Nodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0181909jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000483299700001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles