完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tu, K. N. | en_US |
dc.contributor.author | Gusak, A. M. | en_US |
dc.date.accessioned | 2019-10-05T00:08:46Z | - |
dc.date.available | 2019-10-05T00:08:46Z | - |
dc.date.issued | 2019-08-21 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.5111159 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152855 | - |
dc.description.abstract | We have revisited Black's equation of mean-time-to-failure (MTTF) for electromigration from the viewpoint that in irreversible processes, entropy production is the controlling behavior. We justify that the power factor on current density is n = 2, as given in the original Black's equation. Furthermore, on the basis of entropy production, we provide a unified model of MTTF for thermomigration and stress-migration. We note that up to now, no MTTF for thermomigration and stress-migration is given. Published under license by AIP Publishing. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.5111159 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 126 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000483849000041 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |