完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Yen-Linen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorMa, Chun-Haoen_US
dc.contributor.authorYu, Puen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorYang, Jan-Chien_US
dc.date.accessioned2019-10-05T00:08:48Z-
dc.date.available2019-10-05T00:08:48Z-
dc.date.issued2019-08-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cjph.2019.05.030en_US
dc.identifier.urihttp://hdl.handle.net/11536/152878-
dc.description.abstractThe modern studies of complex oxides have been mainly driven by the development of advanced growth and characterization techniques, which provide researchers unprecedented access to new insights and functionalities of these materials. Epitaxial growth of thin films and related architectures offers a pathway to the discovery and stabilization of a wide spectrum of new possibilities in conjunction with the availability of high quality materials that produced with larger lateral sizes and being grown constrainedly. Compared with conventional growth techniques, such as sputtering, spin coating, sol-gel processes, metal-organic chemical vapor deposition, molecular beam epitaxy and so on, no other single advance in the creation of oxide materials has had as pronounced an impact as pulsed laser deposition. In pursuit of the fruitful functionalities and exciting physical phenomena among complex oxides, pulsed laser deposition technique has played an important role to fulfill the flurry of complex oxides in recent decades. In this article, we focus on the details of the growth of epitaxial oxide thin films and the related polymorphs, as well as recent advances in control of the oxide heteroepitaxy via pulsed laser deposition.en_US
dc.language.isoen_USen_US
dc.subjectPulsed laser depositionen_US
dc.subjectComplex oxideen_US
dc.subjectHeteroepitaxyen_US
dc.subjectThin filmen_US
dc.subjectEpitaxial growthen_US
dc.titlePulsed laser deposition of complex oxide heteroepitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.cjph.2019.05.030en_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume60en_US
dc.citation.spage481en_US
dc.citation.epage501en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000481616100043en_US
dc.citation.woscount0en_US
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