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dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorKuo-Bin Hongen_US
dc.contributor.authorKuo, Shuo-Yien_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2019-10-05T00:08:48Z-
dc.date.available2019-10-05T00:08:48Z-
dc.date.issued2019-09-10en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-49604-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/152883-
dc.description.abstractWe reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm(2) when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14 degrees (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.en_US
dc.language.isoen_USen_US
dc.titleDemonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-49604-0en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000484988100029en_US
dc.citation.woscount0en_US
Appears in Collections:Articles