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dc.contributor.authorChung, Sheng-Tien_US
dc.contributor.authorHuang, Yi-Chinen_US
dc.contributor.authorFu, Yen-Chunen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2019-10-05T00:08:48Z-
dc.date.available2019-10-05T00:08:48Z-
dc.date.issued2019-08-14en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0091909jssen_US
dc.identifier.urihttp://hdl.handle.net/11536/152889-
dc.description.abstractThis paper proposes a chemical pre-treatment process to reduce sulfate prior to atomic layer deposition of Al2O3 gate dielectrics on n-doped In0.7Ga0.3As layers to form metal oxide semiconductor capacitors (MOSCAPs). Cleaning with methanol was done after hydrogen chloride etching and ammonium sulfide passivation. X-ray photoelectron spectroscopy performed on the sample with methanol cleaning indicated that its native oxide regrowth was effectively prevented on the sulfur-passivated In0.7Ga0.3As surface under air exposure. By analysis using atomic force microscopy of the sample cleaned using methanol, no further increase of surface roughness was observed after 5 months of air exposure. In addition, a mid-gap interface defect density (D-it) of 1.3 x 10(12) cm(-2) eV(-1) was obtained from this sample. After forming gas annealing (FGA), the D-it was improved significantly, to a value below 10(12) cm(-2) eV(-1). The obtained data indicate that the combination of chemical pre-treatment and FGA is advantageous to passivating the trap states on In0.7Ga0.3As MOSCAPs. (C) 2019 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0091909jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000481669200001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles