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dc.contributor.authorChen, Cheng-Yuanen_US
dc.contributor.authorLin, Chen-Anen_US
dc.contributor.authorLin, Hsiang-Tingen_US
dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.date.accessioned2019-10-05T00:09:43Z-
dc.date.available2019-10-05T00:09:43Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-943580-57-6en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/152914-
dc.description.abstractThe atomic scale thickness transition metal dichalcogenides (TMDCs) material could be a potential role of miniature light emitting devices (LED). The high color conversion efficiency between CdSe quantum dot (QD) and monolayer tungsten diselenide (WSe2) with Ag NDs metasurface could enhance the light emission of WSe2. The emission enhancement presented the color conversion due to its absorption spectrum of Ag ND. It had the most ideal overlap with QDs and WSe2 simultaneously, which boosted all the effects that would happen in color conversion. In the future, utilizing plasmonic metasurface and combing the TMDCs emitting visible red light with the GaN-based LED and green QDs to helpfully achieve white light emitting device. (C) 2019 The Author(s)en_US
dc.language.isoen_USen_US
dc.titleHigh Color Conversion Efficiency on Monolayer WSe2 Using Plasmonic Metasurfaceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000482226301006en_US
dc.citation.woscount0en_US
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