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dc.contributor.authorLee, You-Tingen_US
dc.contributor.authorChen, Hsuan-Hanen_US
dc.contributor.authorTung, Yi-Chunen_US
dc.contributor.authorShih, Bing-Yangen_US
dc.contributor.authorHsiung, Szu-Yenen_US
dc.contributor.authorLee, Tsung-Mingen_US
dc.contributor.authorHsu, Chih-Chiehen_US
dc.contributor.authorLiu, Chienen_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.date.accessioned2019-10-05T00:09:46Z-
dc.date.available2019-10-05T00:09:46Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0286-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/152948-
dc.description.abstractIn this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.en_US
dc.language.isoen_USen_US
dc.subjectnonvolatile memoryen_US
dc.subjectferroelectric polarizationen_US
dc.subjectremote plasmaen_US
dc.subjectHfZrOen_US
dc.titleFerroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatmentsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000483036000031en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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