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dc.contributor.authorLiu, Kuan-Weien_US
dc.contributor.authorChen, Hsuan-Hanen_US
dc.contributor.authorHuang, Zhong-Yingen_US
dc.contributor.authorWang, Wei-Chunen_US
dc.contributor.authorFan, Yu-Chien_US
dc.contributor.authorLin, Ching-Liangen_US
dc.contributor.authorHsu, Chih-Chiehen_US
dc.contributor.authorFan, Chia-Chien_US
dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.date.accessioned2019-10-05T00:09:46Z-
dc.date.available2019-10-05T00:09:46Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0286-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/152949-
dc.description.abstractIn this paper, the ferroelectric polarization effect of ZrO2 capping layer on HfO2 NUM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO2 film can be induced by a thin ZrO2 capping layer. The thickness of ZrO2 capping layer plays an important role in the ferroelectric polarization of HfO2 MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO2/HfO2 film shows the advantage for suppressing the leakage issue during high-temperature ferroelectric phase transition.en_US
dc.language.isoen_USen_US
dc.subjectferroelectricityen_US
dc.subjecthafnium oxideen_US
dc.subjectzirconium oxideen_US
dc.subjectphase transitionen_US
dc.titleInvestigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layeren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000483036000065en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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