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dc.contributor.authorHan, Ping-Chengen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorHo, Yu-Hsuanen_US
dc.contributor.authorYan, Zong-Zhengen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-10-05T00:09:47Z-
dc.date.available2019-10-05T00:09:47Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0581-9en_US
dc.identifier.issn1063-6854en_US
dc.identifier.urihttp://hdl.handle.net/11536/152971-
dc.description.abstractIn this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with high threshold voltage of 3.19V, high maximum drain current of 716 mA/mm and high breakdown voltage of 906V is demonstrated for the first time. Three different thin barrier structures were compared for device performance. In addition, long-term reliability measurements were carried out to investigate the interface quality of the devices with and without gate recess. The recessfree device exhibits a smaller Vth hysteresis and a more stable performance than those of gate recessed devices. Overall, the recess-free thin barrier AlGaN/GaN MIS-HEMT demonstrates promising performance for power switching applications.en_US
dc.language.isoen_USen_US
dc.subjectAlGaNen_US
dc.subjectHEMTen_US
dc.subjectnormally-offen_US
dc.subjectthin barrieren_US
dc.subjectrecess-freeen_US
dc.titleRecess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)en_US
dc.citation.spage427en_US
dc.citation.epage430en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000484987200105en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper