標題: DC and dynamic switching characteristics of field-plated vertical geometry beta-Ga2O3 rectifiers
作者: Yang, Jiancheng
Carey, Patrick
Ren, Fan
Chen, Yen-Ting
Liao, Y.
Chang, Chin-Wei
Lin, Jenshan
Tadjer, Marko
Pearton, S. J.
Smith, David J.
Kuramata, Akito
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: Gallium Oxide;rectifiers;switching;on-state resistance;wide bandgap semiconductor;edge termination;field plate;power converters
公開日期: 1-Jan-2019
摘要: Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga2O3 vertical rectifiers (1000-1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 mu m. If the doping is in the 10(16) cm range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga2O3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm(2)) Ga2O3 rectifiers were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n(+) Ga2O3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga2O3 rectifiers. The on-state resistance was 0.26 Omega.cm(2) for these largest diodes, decreasing to 5.9 x 10 Omega.cm(2) for 40x40 mu m devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 x10(-3) cm(2) area) and an absolute forward current of 1 A on 8 mu m thick epitaxial beta-Ga2O3 drift layers. These devices were switched from 0.225 A to -700 V with t of 82 ns, and from 1 A to -300 V with t of 64 ns and no significant temperature dependence up to 125 degrees C. There was no significant temperature dependence of t(rr)up to 150 degrees C.
URI: http://dx.doi.org/10.1117/12.2515006
http://hdl.handle.net/11536/152972
ISBN: 978-1-5106-2481-8
ISSN: 0277-786X
DOI: 10.1117/12.2515006
期刊: OXIDE-BASED MATERIALS AND DEVICES X
Volume: 10919
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper