Fabricating GaN-based LEDs on (-201) beta-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Abstract

This study demonstrates two approaches to the growth of GaN-based LEDs on (-2 0 1)-oriented beta-Ga2O3 single crystal substrates using metalorganic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (-2 0 1) beta-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (-2 0 1) beta-Ga2O3 single crystal substrate. (C) 2019 The Japan Society of Applied Physics