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dc.contributor.authorWu, F. M.en_US
dc.contributor.authorPeng, P. C.en_US
dc.contributor.authorYeh, S. K.en_US
dc.contributor.authorLin, C. T.en_US
dc.contributor.authorChen, J. H.en_US
dc.contributor.authorChi, S.en_US
dc.date.accessioned2014-12-08T15:21:32Z-
dc.date.available2014-12-08T15:21:32Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-3680-4en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11536/15302-
dc.identifier.urihttp://dx.doi.org/10.1109/LEOS.2009.5343128en_US
dc.description.abstractThis investigation experimentally explores a microwave phase shifter using a semiconductor laser in an optical single sidebancl system. The operational bandwidth from 12 to 20 GHz is achieved by adjusting the bias current.en_US
dc.language.isoen_USen_US
dc.titleElectrically Controlled Phase Shifter using Semiconductor Laser in Optical Single Sideband Systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LEOS.2009.5343128en_US
dc.identifier.journal2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2en_US
dc.citation.spage593en_US
dc.citation.epage594en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000279577600304-
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