標題: | Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates |
作者: | Liu, Xinke Wang, Hao-Yu Chiu, Hsien-Chin Chen, Yuxuan Li, Dabing Huang, Chong-Rong Kao, Hsuan-Ling Kuo, Hao-Chung Chen, Sung-Wen Huang 光電工程學系 Department of Photonics |
關鍵字: | GaN on GaN;Microwave;HEMT;Back barrier;Raman |
公開日期: | 25-Jan-2020 |
摘要: | The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jallcom.2019.152293 http://hdl.handle.net/11536/153030 |
ISSN: | 0925-8388 |
DOI: | 10.1016/j.jallcom.2019.152293 |
期刊: | JOURNAL OF ALLOYS AND COMPOUNDS |
Volume: | 814 |
起始頁: | 0 |
結束頁: | 0 |
Appears in Collections: | Articles |