標題: Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
作者: Liu, Xinke
Wang, Hao-Yu
Chiu, Hsien-Chin
Chen, Yuxuan
Li, Dabing
Huang, Chong-Rong
Kao, Hsuan-Ling
Kuo, Hao-Chung
Chen, Sung-Wen Huang
光電工程學系
Department of Photonics
關鍵字: GaN on GaN;Microwave;HEMT;Back barrier;Raman
公開日期: 25-Jan-2020
摘要: The effect of AlGaN back-barrier on AlGaN/GaN high electron mobility transistors (HEMTs) using freestanding GaN wafer has been investigated in this work. With the introducing back-barrier structure, the leakage path underneath the buffer (native nitrogen-vacancies and GaOx compounds of the HVPE-grown free-standing GaN surface) layer can be suppressed by lift-up the conduction band. As compared with AlGaN/GaN HEMTs on SiC wafer, AlGaN/GaN HEMTs on free-standing GaN wafer show enhanced drain current ( 700 mA/mm), improved transconductance (143 mS/mm), less current collapse (12%), higher current gain cut-off frequency (13 GHz), and maximum stable gain cut-off frequency (24 GHz), which is attributed to the higher epi quality layer on free-standing GaN wafer. (C) 2019 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2019.152293
http://hdl.handle.net/11536/153030
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2019.152293
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 814
起始頁: 0
結束頁: 0
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