標題: A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors
作者: Huang, Feng
Li, Jing Zhou
Xu, Zhu Hua
Liu, Yuan
Luo, Ri Peng
Zhang, Si Wei
Nie, Peng Bo
Lv, Yan Fei
Zhao, Shi Xi
Su, Wei Tao
Li, Wen Di
Zhao, Shi Chao
Wei, Guo Dan
Kuo, Hao Chung
Kang, Fei Yu
光電工程研究所
Institute of EO Enginerring
關鍵字: 2D-WS2;photodetector;organic semiconductor;responsivity
公開日期: 1-Sep-2019
摘要: Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N,N '-bis-4-butylphenyl-N,N '-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 x 10(11) Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.
URI: http://dx.doi.org/10.3390/nano9091312
http://hdl.handle.net/11536/153116
DOI: 10.3390/nano9091312
期刊: NANOMATERIALS
Volume: 9
Issue: 9
起始頁: 0
結束頁: 0
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