完整後設資料紀錄
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dc.contributor.authorPattanayak, Bhaskaren_US
dc.contributor.authorSimanjuntak, Firman Mangasaen_US
dc.contributor.authorPanda, Debashisen_US
dc.contributor.authorYang, Chih-Chiehen_US
dc.contributor.authorKumar, Amiten_US
dc.contributor.authorPhuoc-Anh Leen_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-12-13T01:12:16Z-
dc.date.available2019-12-13T01:12:16Z-
dc.date.issued2019-11-14en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-53364-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/153143-
dc.description.abstractIn this study, the effect of oxygen vacancy in the CoMn2O4 on pseudocapacitive characteristics was examined, and two tetragonal CoMn2O4 spinel compounds with different oxygen vacancy concentrations and morphologies were synthesized by controlling the mixing sequence of the Co and Mn precursors. The mixing sequence was changed; thus, morphologies were changed from spherical nanoparticles to nanoflakes and oxygen vacancies were increased. Electrochemical studies have revealed that tetragonal CoMn2O4 spinels with a higher number of oxygen vacancies exhibit a higher specific capacitance of 1709 F g(-1) than those with a lower number of oxygen vacancies, which have a higher specific capacitance of 990 F g(-1). Oxygen vacancies create an active site for oxygen ion intercalation. Therefore, oxidation-reduction reactions occur because of the diffusion of oxygen ions at octahedral/tetrahedral crystal edges. The solid-state asymmetric pseudocapacitor exhibits a maximum energy density of 32 Wh.kg(-1) and an excellent cyclic stability of nearly 100%.en_US
dc.language.isoen_USen_US
dc.titleRole of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitoren_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-53364-2en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000496416000062en_US
dc.citation.woscount0en_US
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