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dc.contributor.authorSong, Baokunen_US
dc.contributor.authorGu, Honggangen_US
dc.contributor.authorFang, Mingshengen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChen, Xiuguoen_US
dc.contributor.authorJiang, Haoen_US
dc.contributor.authorLiu, Shiyuanen_US
dc.date.accessioned2019-12-13T01:12:19Z-
dc.date.available2019-12-13T01:12:19Z-
dc.date.issued2019-10-17en_US
dc.identifier.issn1948-7185en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpclett.9b02111en_US
dc.identifier.urihttp://hdl.handle.net/11536/153179-
dc.description.abstractThe complex optical conductivities of two-dimensaionl (2D) materials are fundamental for extended applications of related optoelectronic devices. Here, we systematically investigate the layer-dependent evolutions in the complex optical conductivities of 1-6 layer 2D MoS2 over an ultrawide spectral range (0.73-6.42 eV) by spectroscopic ellipsometry. We identify five feature peaks (A-E) in the optical conductivity spectra, which present interesting layer dependencies due to the scaling effect. Results suggest that the center energies of peaks A and B are nearly layer-independent, while those of peaks C and D exhibit redshifts as the layer increases. We interpret these layer-dependent evolutions as the competition between the decreasing exciton effect and the prominent band shrinkage with the increasing layer number. Additionally, the applicability of the classical slab model and the surface current model in evaluating the optical conductivities of 2D MoS2 with different layers is discussed from an experimental perspective.en_US
dc.language.isoen_USen_US
dc.titleComplex Optical Conductivity of Two-Dimensional MoS2 : A Striking Layer Dependencyen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpclett.9b02111en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue20en_US
dc.citation.spage6246en_US
dc.citation.epage6252en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000492425100039en_US
dc.citation.woscount0en_US
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