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dc.contributor.authorPetrov, Stefanen_US
dc.contributor.authorRafailov, Peter M.en_US
dc.contributor.authorMarinova, Veraen_US
dc.contributor.authorLin, Shiuan-Hueien_US
dc.contributor.authorLai, Yi-Chunen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorDimitrov, Dimitre Z.en_US
dc.contributor.authorKarashanova, Danielaen_US
dc.contributor.authorGospodinov, Marinen_US
dc.date.accessioned2019-12-13T01:12:19Z-
dc.date.available2019-12-13T01:12:19Z-
dc.date.issued2019-11-30en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2019.137521en_US
dc.identifier.urihttp://hdl.handle.net/11536/153180-
dc.description.abstractGraphene films with high content of bilayer graphene are obtained by chemical vapor deposition technique on copper (Cu) foil by means of suitably designing the flux geometries of the reactant gases. First single-layer graphene growth is optimized using a preliminary oxygen passivation of the Cu substrate which facilitates the formation of larger graphene grains with low defect density. Then, in order to enhance the transport of reactant species to the catalyst substrate, the gas flux geometry is modified in two ways: (i) fixing a graphite holder next to the Cu substrate perpendicular to the stream of the flux gases or (ii) positioning the Cu foil into a graphite shelter. It is found that both modifications facilitate the growth of a second graphene layer leading to increased formation of bilayer graphene. The obtained graphene layers are characterized by Raman spectroscopy (with special focus on the overtone (2D) of the disorder-induced band), scanning electron microscopy, transmission electron microscopy, atomic force microscope analysis and optical transmission measurements. Narrow symmetric 2D Raman peaks with linewidths ranging down to 22 cm(-1) but blue-shifted with respect to that of single-layer graphene are obtained from graphite holder- and shelter-grown samples indicating high-quality bilayer graphene.en_US
dc.language.isoen_USen_US
dc.subjectSingle-layer grapheneen_US
dc.subjectBilayer grapheneen_US
dc.subjectChemical vapor depositionen_US
dc.subjectRaman spectroscopyen_US
dc.titleChemical vapor deposition growth of bilayer graphene via altering gas flux geometryen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2019.137521en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume690en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000490974900003en_US
dc.citation.woscount0en_US
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