Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Yu-Chang | en_US |
dc.contributor.author | Hsu, Liang-Ching | en_US |
dc.contributor.author | Lin, Chia-Yu | en_US |
dc.contributor.author | Chiang, Chao-Lung | en_US |
dc.contributor.author | Chou, Che-Min | en_US |
dc.contributor.author | Wu, Wen-Wei | en_US |
dc.contributor.author | Chen, San-Yuan | en_US |
dc.contributor.author | Lin, Yan-Gu | en_US |
dc.date.accessioned | 2019-12-13T01:12:20Z | - |
dc.date.available | 2019-12-13T01:12:20Z | - |
dc.date.issued | 2019-10-23 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsami.9b11737 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/153188 | - |
dc.description.abstract | An n-Cu2O layer formed a high-quality buried junction with p-Cu2O to increase the photovoltage and thus to shift the turn-on voltage positively. Mott-Schottky measurements confirmed that the improvement benefited from a positive shift in flat-band potential. The obtained extremely positive onset potential, 0.8 V-RHE in n-Cu2O/AuAg/p-Cu2O, is comparable with measurements from water reduction catalysts. The AuAg alloy sandwiched between the homo-junction of n-Cu2O and p-Cu2O improved the photocatalytic performance. This alloy both served as an electron relay and promoted electron-hole pair generation in nearby semiconductors; the charge transfer between n-Cu2O and p-Cu2O in the sandwich structure was measured with X-ray absorption spectra. The proposed sandwich structure can be considered as a new direction for the design of efficient solar-related devices. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | solar water splitting | en_US |
dc.subject | sandwich structure | en_US |
dc.subject | copper(I) oxide | en_US |
dc.subject | photocathode | en_US |
dc.subject | localized surface plasmon resonance | en_US |
dc.title | Sandwich-Nanostructured n-Cu2O/AuAg/p-Cu2O Photocathode with Highly Positive Onset Potential for Improved Water Reduction | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/acsami.9b11737 | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.issue | 42 | en_US |
dc.citation.spage | 38625 | en_US |
dc.citation.epage | 38632 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000492802100026 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |