Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode

Abstract

Traditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium-tin-oxide (ITO) is used as the TE, different forming processes, including lower forming voltages and higher forming currents, are exhibited. This work investigates the forming process with such a transparent TE under UV illumination. In addition, different TE thicknesses and device cell sizes are also investigated to confirm the results. Finally, a possible conduction model is provided to explain the mechanisms under UV-light illumination for the transparent TE during the forming process.