完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Wei-Chenen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorTseng, Yi-Tingen_US
dc.contributor.authorZheng, Hao-Xuanen_US
dc.contributor.authorTan, Yung-Fangen_US
dc.contributor.authorWu, Chung-Weien_US
dc.contributor.authorYeh, Yuh-Suanen_US
dc.contributor.authorMa, Xiao-Huaen_US
dc.contributor.authorHao, Yueen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2019-12-13T01:12:20Z-
dc.date.available2019-12-13T01:12:20Z-
dc.date.issued2020-01-09en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6463/ab467een_US
dc.identifier.urihttp://hdl.handle.net/11536/153194-
dc.description.abstractTraditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium-tin-oxide (ITO) is used as the TE, different forming processes, including lower forming voltages and higher forming currents, are exhibited. This work investigates the forming process with such a transparent TE under UV illumination. In addition, different TE thicknesses and device cell sizes are also investigated to confirm the results. Finally, a possible conduction model is provided to explain the mechanisms under UV-light illumination for the transparent TE during the forming process.en_US
dc.language.isoen_USen_US
dc.subjectresistance random access memory (RRAM)en_US
dc.subjectUV-light illuminationen_US
dc.subjectforming processen_US
dc.subjectindium-tin-oxide (ITO)en_US
dc.titleInvestigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6463/ab467een_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000492957100001en_US
dc.citation.woscount0en_US
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