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dc.contributor.authorXu, Rong-Binen_US
dc.contributor.authorXu, Huanen_US
dc.contributor.authorMei, Yangen_US
dc.contributor.authorShi, Xiao-Lingen_US
dc.contributor.authorYing, Lei-Yingen_US
dc.contributor.authorZheng, Zhi-Weien_US
dc.contributor.authorLong, Haoen_US
dc.contributor.authorQiu, Zhi-Renen_US
dc.contributor.authorZhang, Bao-Pingen_US
dc.contributor.authorLiu, Jian-Pingen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-12-13T01:12:21Z-
dc.date.available2019-12-13T01:12:21Z-
dc.date.issued2019-12-01en_US
dc.identifier.issn0022-2313en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jlumin.2019.116717en_US
dc.identifier.urihttp://hdl.handle.net/11536/153205-
dc.description.abstractWe fabricated GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) by inserting InGaN quantum well (QW) active region between two dielectric distributed Bragg reflectors (DBRs). Due to the different gain enhancement factors in a single device, multi-longitudinal modes were observed and tuned with changing the injection current density: pure-blue (PB) at low current density, violet-blue (VB) at intermediate current density, and PB again at high current density. The variation of emission spectra is explained by the competition between band-filling effect and self-heating effect.en_US
dc.language.isoen_USen_US
dc.titleEmission dynamics of GaN-based blue resonant-cavity light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jlumin.2019.116717en_US
dc.identifier.journalJOURNAL OF LUMINESCENCEen_US
dc.citation.volume216en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000493395400019en_US
dc.citation.woscount0en_US
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