完整後設資料紀錄
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dc.contributor.authorHsu, Wen-Yangen_US
dc.contributor.authorLian, Yuan-Chien_US
dc.contributor.authorWu, Pei-Yuen_US
dc.contributor.authorYong, Wei-Minen_US
dc.contributor.authorSheu, Jinn-Kongen_US
dc.contributor.authorLin, Kun-Linen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2019-12-13T01:12:21Z-
dc.date.available2019-12-13T01:12:21Z-
dc.date.issued2019-10-29en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0182001JSSen_US
dc.identifier.urihttp://hdl.handle.net/11536/153207-
dc.description.abstractMicron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail. (C) The Author(s) 2019. Published by ECS.en_US
dc.language.isoen_USen_US
dc.titleSuppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchanten_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0182001JSSen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000493447300001en_US
dc.citation.woscount0en_US
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