標題: Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
作者: Chandrasekaran, Sridhar
Simanjuntak, Firman Mangasa
Panda, Debashis
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: Switches;Synapses;Neurons;Memristors;Linearity;Indium tin oxide;Brain-inspired computing;neural networks;resistive synapse;synapse
公開日期: 1-Nov-2019
摘要: The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88 %) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.
URI: http://dx.doi.org/10.1109/TED.2019.2941764
http://hdl.handle.net/11536/153228
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2941764
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 11
起始頁: 4722
結束頁: 4726
Appears in Collections:Articles