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dc.contributor.authorYeh, Po-Chenen_US
dc.contributor.authorDuan, Haoen_US
dc.contributor.authorChung, Tien-Kanen_US
dc.date.accessioned2019-12-13T01:12:23Z-
dc.date.available2019-12-13T01:12:23Z-
dc.date.issued2019-10-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/mi10100710en_US
dc.identifier.urihttp://hdl.handle.net/11536/153232-
dc.description.abstractWe report a novel three-axial magnetic-piezoelectric microelectromechanical systems (MEMS) magnetic field sensor. The sensor mainly consists of two sensing elements. Each of the sensing elements consists of a magnetic Ni thick film, a Pt/Ti top electrode, a piezoelectric lead zirconate titanate (PZT) thin film, a Pt/Ti bottom electrode, a SiO2 insulation layer, and a moveable Si MEMS diaphragm. When the sensor is subjected to an AC magnetic field oscillating at 7.5 kHz, a magnetic force interaction between the magnetic field and Ni thick film is produced. Subsequently, the force deforms and deflects the diaphragms as well as the PZT thin film deposited on the diaphragms. The deformation and deflection produce corresponding voltage outputs due to the piezoelectric effect. By analyzing the voltage outputs through our criterion, we can obtain details of the unknown magnetic fields to which the sensor is subjected. This achieves sensing of three-axial magnetic fields. The experimental results show that the sensor is able to sense three-axial magnetic fields ranging from 1 to 20 Oe, with X-axial, Y-axial, and Z-axial sensitivities of 0.156 mV(rms)/Oe, 0.156 mV(rms)/Oe, and 0.035 mV(rms)/Oe, respectively, for sensing element A and 0.033 mV(rms)/Oe, 0.044 mV(rms)/Oe, and 0.130 mV(rms)/Oe, respectively, for sensing element B.en_US
dc.language.isoen_USen_US
dc.subjectMEMSen_US
dc.subjectmagnetic field sensoren_US
dc.subjectACen_US
dc.subjectthree-axialen_US
dc.subjectpiezoelectricen_US
dc.titleA Novel Three-Axial Magnetic-Piezoelectric MEMS AC Magnetic Field Sensoren_US
dc.typeArticleen_US
dc.identifier.doi10.3390/mi10100710en_US
dc.identifier.journalMICROMACHINESen_US
dc.citation.volume10en_US
dc.citation.issue10en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000494485000084en_US
dc.citation.woscount0en_US
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